Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

The Ti/MoS2 based 9 x 9 conductive bridge cross-points in Al/Cu/Ti/MoS2/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current compliances (CCs) of 10 mu A-300 mu A and long program/erase (P/E) endurance of >7 x 10(8) with low P/E current of 10 mu A/100 mu A at a high-speed of 100 ns have been obtained than pure MoS2 based devices. Copper reduction-oxidation (redox) reaction associated resistive switching mechanism through cyclic-voltammetry is also investigated. Conductivity modulated potentiation and depression results as well as LTP/LTD characteristics have been explored. Significantly low energy consumption in between 17 fJ to 398 fJ has been obtained.