期刊
VACUUM
卷 177, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2020.109345
关键词
Semiconductor; 6H-SiC; Al2O3 thin films; Al2O3/6H-SiC interface; Valence band; Photoelectron spectroscopy
资金
- University of Wroclaw [1010/S/IFD/20]
The physical vapor deposition method is used to form layers of Al2O3 insulator on carbon enriched (0001)-oriented 6H-SiC substrate at room temperature. The substrate surface and the Al2O3/6H-SiC interface are characterized in situ by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The electron affinity (EA) of the pre-annealed up to 800 degrees C under ultrahigh vacuum 6H-SiC(0001) surface and the 7 nm thick Al2O3 layer deposited on the substrate amounts to 4.1 eV, and 1.9 eV respectively. The formation of the Al2O3 compound is confirmed by the appropriate binding energies of Al-2p and O-1s core level lines, which are 75.6 eV and 532.3 eV, respectively. The valence band offset (VBO) of the Al2O3/6H-SiC interface is found to be -3.2 eV and the conduction band offset is calculated to be 0.7 eV.
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