期刊
SURFACE AND INTERFACE ANALYSIS
卷 52, 期 12, 页码 933-938出版社
WILEY
DOI: 10.1002/sia.6829
关键词
buried interfaces; GaP; Si; HAXPES; interface chemical states
资金
- Czech Science Foundation (GACR) [18-06970J]
- German Research Foundation (DFG) [HA3096/10-1]
- NIMS microstructural platform as a program of Nanotechnology Platform of MEXT, Japan [12024046]
- Operational Program Research, Development and Education - European Structural and Investment Funds
- Czech Ministry of Education, Youth and Sports [SOLID21-CZ.02.1.01/0.0/0.0/16_019/0000760]
We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4-50 nm) GaP films were grown on Si(001) substrates with 2 degrees miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.
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