期刊
SOLID-STATE ELECTRONICS
卷 170, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2020.107814
关键词
Amorphous InGaZnO (a-IGZO); Thin-film transistor (TFT); Hump; Negative bias temperature instability (NBTI); Positive charges; Parasitic current path
资金
- National Science foundation of China [NSFC-61574047, 61574096, 61974101]
In this work, we investigated an anomalous hump in the bottom-gate amorphous-InGaZnO thin-film transistors. The hump in the subthreshold region appeared at elevated temperature and disappeared after N-2 atmosphere annealing. The anomalous hump phenomenon is attributed to the existence of both main current path composed by electron and parasitic current path induced by positive charges formed by adsorbed H2O molecules. With the increase of the testing temperature, the hump effect becomes significant since the formation of positive charges is strengthened by heat. This hump can be weakened by negative bias temperature instability stress at high temperature due to the charge-trapping mechanism.
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