期刊
SEMICONDUCTORS
卷 54, 期 6, 页码 682-686出版社
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782620060093
关键词
gallium-oxide films; thermal annealing; dark current; photocurrent
资金
- Russian Science Foundation [16-13-06001]
- Deutsches Elektronen-Synchrotron research center (DESY, Germany) [HRSF-0004]
Resistive-type structures based on gallium-oxide films are studied. The Ga(2)O(3)films are produced by radio-frequency magnetron-assisted sputtering of a beta-Ga2O3(99.9999%) target onto unheated sapphire substrates with preliminarily deposited platinum electrodes. The data on the structure and phase composition of the films are obtained immediately after sputtering and after annealing in argon at 900 degrees C for 30 min. The current-voltage characteristics are recorded in the dark and upon exposure to radiation at the wavelength lambda = 254 nm. It is shown that, after annealing, the photocurrent increases by an order of magnitude. The lack of sensitivity of the structures to radiation in the visible wavelength region (lambda = 400 nm) is verified experimentally.
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