期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 35, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aba287
关键词
graphene; two-dimensional materials; field effect transistor; capacitance measurement; subthreshold swing
类别
资金
- Canon Foundation
- JSPS Core-to-Core Program, A. Advanced Research Networks
- JSPS A3 Foresight Program
- JSPS KAKENHI, Japan [JP16H04343, JP19H00755, 19K21956]
- Grants-in-Aid for Scientific Research [19K21956] Funding Source: KAKEN
Fifteen years have passed since graphene was first isolated on the substrate from bulk graphite. During that period, two-dimensional (2D) layered materials with intrinsic band gaps have been realized. Although many exciting results have been reported for both their fundamental physics and applications, the discussion of 2D electron device application to the future integrated circuit is still based on the expectation of the inherently high properties that 2D materials ideally possess. This review article focuses on the gate stack property, which is one of most important building blocks in the field effect transistor. Starting from the comparison of the 2D/SiO(2)interface properties with the conventional SiO2/Si interface properties, recent advances in the studies of gate stack properties for bilayer graphene and MoS(2)field-effect transistors are discussed. In particular, the advantages and disadvantages of the 2D heterostructures with 2D insulator ofh-BN are emphasized. This review may provide conceptual and experimental approaches for controlling the 2D heterointerface properties.
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