4.8 Article

Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

期刊

SCIENCE
卷 369, 期 6503, 页码 542-+

出版社

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aba9778

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资金

  1. National Key Research and Development Program of China [2018YFB0703600, 2017YFB0702001]
  2. National Natural Science Foundation of China [51625205, 91963208, 51961135106, 51902249]
  3. Nature Science Foundation of Shanghai [19ZR1419900]
  4. Shanghai Engineering Research Center of Hot Manufacturing [18DZ2253400]

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Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Mobius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Xi) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.

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