期刊
SCIENCE
卷 369, 期 6503, 页码 542-+出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aba9778
关键词
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资金
- National Key Research and Development Program of China [2018YFB0703600, 2017YFB0702001]
- National Natural Science Foundation of China [51625205, 91963208, 51961135106, 51902249]
- Nature Science Foundation of Shanghai [19ZR1419900]
- Shanghai Engineering Research Center of Hot Manufacturing [18DZ2253400]
Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Mobius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Xi) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.
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