期刊
SCIENCE
卷 369, 期 6499, 页码 81-+出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.abb0631
关键词
-
资金
- U.S. Department of Energy (DOE) Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05CH11231, KC23MP]
- Kwanjeong Educational Foundation
- DOE Office of Science, Office of Basic Energy Sciences [DE-SC-0012375]
- NSF [DMR-1708615, DMR1608938, OISE-1545907]
- Intel Corp. through the FEINMAN program
Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as similar to 133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据