期刊
PHASE TRANSITIONS
卷 93, 期 8, 页码 793-801出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/01411594.2020.1789918
关键词
Thin films; chemical bath deposition; Cu2Se; electrical properties; optical properties
资金
- University Grants Commission (UGC), New Delhi, India [F.25-1/2013-14 (BSR)/7-305/2010(BSR)]
- DST-FIST
- UGC-SAP
- RUSA-MHRD New Delhi
Pure and Sb-doped Cu2Se thin films have been prepared by the simple chemical bath deposition method. The structural, morphological, compositional, optical and electrical properties of the Cu2Se films were analysed using x-ray diffraction (XRD), scanning electron microscope (SEM), Energy-dispersive X-ray spectroscopy (EDAX), UV-Visible (UV-Vis) spectrophotometry and Hall Effect set-up, respectively. The XRD analysis shows the cubic structure of pure and Sb-doped Cu2Se thin films. The crystallite size is found to be decreased for Sb concentration. The morphological studies revealed spherical-shaped particles for Cu2Se and 0.03 M Sb-doped Cu2Se films. The 0.03 M Sb-doped Cu2Se films shows pinholes. The optical absorption study shows good optical absorption forpure and Sb-doped Cu2Se thin films. The bandgap value of pure Cu2Se film is about 1.52(2) eV and it is found to be increased for Sb-doped films. The Hall Effect measurement confirms p-type conductivity for pure and Sb doped Cu2Se thin films. The carrier concentration value of the Sb-doped Cu2Se thin films is found to be increased.
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