Electrical and optical properties of Sb-doped Cu2Se thin films deposited by chemical bath deposition

Pure and Sb-doped Cu2Se thin films have been prepared by the simple chemical bath deposition method. The structural, morphological, compositional, optical and electrical properties of the Cu2Se films were analysed using x-ray diffraction (XRD), scanning electron microscope (SEM), Energy-dispersive X-ray spectroscopy (EDAX), UV-Visible (UV-Vis) spectrophotometry and Hall Effect set-up, respectively. The XRD analysis shows the cubic structure of pure and Sb-doped Cu2Se thin films. The crystallite size is found to be decreased for Sb concentration. The morphological studies revealed spherical-shaped particles for Cu2Se and 0.03 M Sb-doped Cu2Se films. The 0.03 M Sb-doped Cu2Se films shows pinholes. The optical absorption study shows good optical absorption forpure and Sb-doped Cu2Se thin films. The bandgap value of pure Cu2Se film is about 1.52(2) eV and it is found to be increased for Sb-doped films. The Hall Effect measurement confirms p-type conductivity for pure and Sb doped Cu2Se thin films. The carrier concentration value of the Sb-doped Cu2Se thin films is found to be increased.