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M. Siekacz et al.
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V. Sheremet et al.
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All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
S. Neugebauer et al.
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Hybrid tunnel junction contacts to III-nitride light-emitting diodes
Erin C. Young et al.
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Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
B. P. Yonkee et al.
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Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
Xinbo Zou et al.
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High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications
Ricardo X. G. Ferreira et al.
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Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Felix Nippert et al.
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\ InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
M. Malinverni et al.
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Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
J. T. Leonard et al.
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The efficiency challenge of nitride light-emitting diodes for lighting
Claude Weisbuch et al.
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GaIn N-based tunnel junctions with high InN mole fractions grown by MOVPE
Daichi Minamikawa et al.
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Directional radiation beam from yellow-emitting InGaN-based nanocolumn LEDs with ordered bottom-up nanocolumn array
Ai Yanagihara et al.
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InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
Sriram Krishnamoorthy et al.
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Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs
George T. Wang et al.
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InGaN/GaN light-emitting diode with a polarization tunnel junction
Zi-Hui Zhang et al.
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GaInN-Based Tunnel Junctions in n-p-n Light Emitting Diodes
Mitsuru Kaga et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
GdN Nanoisland-Based GaN Tunnel Junctions
Sriram Krishnamoorthy et al.
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Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes
Dario Schiavon et al.
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Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
Guan-Bo Lin et al.
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Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods
Bin Jiang et al.
OPTICS EXPRESS (2012)
Auger recombination in GaInN/GaN quantum well laser structures
M. Brendel et al.
APPLIED PHYSICS LETTERS (2011)
High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays
Ya-Ju Lee et al.
APPLIED PHYSICS LETTERS (2009)
Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters
H. J. Chang et al.
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Strain relaxation and quantum confinement in InGaN/GaN nanoposts
HS Chen et al.
NANOTECHNOLOGY (2006)
High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
HM Kim et al.
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GaN-based light emitting diodes with tunnel junctions
T Takeuchi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2001)
Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
SR Jeon et al.
APPLIED PHYSICS LETTERS (2001)
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