期刊
OPTICS EXPRESS
卷 28, 期 14, 页码 20785-20793出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.397164
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资金
- H2020 LEIT Information and Communication Technologies [780240]
- Agence Nationale de la Recherche [ANR-10-IRT-05, ANR-11-EQPX-0016, ANR-15-IDEX-02]
- Agence Nationale de la Recherche (ANR) [ANR-11-EQPX-0016] Funding Source: Agence Nationale de la Recherche (ANR)
We report on 2.3-mu m etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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