期刊
OPTICS EXPRESS
卷 28, 期 15, 页码 22524-22539出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.394580
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资金
- Japan Society for the Promotion of Science [JP15H05732, JP16H02332, JP16H06426]
- Fundacja na rzecz Nauki Polskiej (TEAM) [TECH/2017-4/24]
We report a thorough study of InGaN quantum wells spatially modified by varying the local misorientation of the GaN substrate prior to the epitaxial growth of the structure. More than 25 nm shift of emission wavelength was obtained, which is attributed to indium content changes in the quantum wells. Such an active region is promising for broadening of the emission spectrum of (In,Al,Ga)N superluminescent diodes. We observed that the light intensity changes with misorientation, being stable around 0.5 degrees to 2 degrees and decreasing above 2 degrees. This relation can be used as a base for future device designing. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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