期刊
NATURE PHOTONICS
卷 14, 期 9, 页码 578-+出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41566-020-0647-4
关键词
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资金
- AFOSR [FA9550-17-1-0377]
- ARO [W911NF-16-2-0194]
- US Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0018041]
- NSF [DMR-1839175, CCF-1838435]
- U.S. Department of Energy (DOE) [DE-SC0018041] Funding Source: U.S. Department of Energy (DOE)
In integrated photonics, specific wavelengths such as 1,550 nm are preferred due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, two-dimensional materials bear scientifically and technologically relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with two-dimensional transition metal dichalcogenide materials due to their large optical bandgaps. Here we demonstrate a MoTe2-based photodetector featuring a strong photoresponse (responsivity 0.5 A W-1) operating at 1,550 nm in silicon photonics enabled by strain engineering the two-dimensional material. Non-planarized waveguide structures show a bandgap modulation of 0.2 eV, resulting in a large photoresponse in an otherwise photoinactive medium when unstrained. Unlike graphene-based photodetectors that rely on a gapless band structure, this photodetector shows an approximately 100-fold reduction in dark current, enabling an efficient noise-equivalent power of 90 pW Hz(-0.5). Such a strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.
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