Engineering long spin coherence times of spin-orbit qubits in silicon

Spin qubits in systems with strong spin-orbit coupling can be electrically controlled, but are usually affected by short coherence times. Here, coherence times up to 10 ms are obtained for strain-engineered hole states bound to boron acceptors in silicon 28. Electron-spin qubits have long coherence times suitable for quantum technologies. Spin-orbit coupling promises to greatly improve spin qubit scalability and functionality, allowing qubit coupling via photons, phonons or mutual capacitances, and enabling the realization of engineered hybrid and topological quantum systems. However, despite much recent interest, results to date have yielded short coherence times (from 0.1 to 1 mu s). Here we demonstrate ultra-long coherence times of 10 ms for holes where spin-orbit coupling yields quantized total angular momentum. We focus on holes bound to boron acceptors in bulk silicon 28, whose wavefunction symmetry can be controlled through crystal strain, allowing direct control over the longitudinal electric dipole that causes decoherence. The results rival the best electron-spin qubits and are 10(4)to 10(5)longer than previous spin-orbit qubits. These results open a pathway to develop new artificial quantum systems and to improve the functionality and scalability of spin-based quantum technologies.

Automated summary

Strong spin-orbit coupling systems allow for electrically controlled spin qubits, with electron-spin qubits having long coherence times suitable for quantum technologies. Ultra-long coherence times of 10 ms have been demonstrated for strain-engineered hole states bound to boron acceptors in bulk silicon 28, promising to greatly improve spin qubit scalability and functionality. These results open up new possibilities for developing artificial quantum systems and enhancing the functionality and scalability of spin-based quantum technologies.