期刊
NANOTECHNOLOGY
卷 31, 期 47, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/abad5e
关键词
self-assembled monolayer (SAM); functional group; lower surface energy; positive bias stress (PBS); oxide thin-film transistor; hysteresis
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT (MSIT) [NRF-2020R1A2B5B03002136]
The exact direction of the surface energy characterized functional groups of self-assembled monolayers (SAMs) is proposed for achieving enhanced electrical stability of indium gallium zinc oxide (IGZO) semiconductor thin film transistors (TFTs). The SAM treatment, particularly with the SAM functional group having lower surface energy, makes it difficult to adsorb oxygen molecules difficult onto IGZO. Such an effect greatly improves the positive bias stability (PBS) and clockwise hysteresis stability. For NH(2)and CF(3)functional groups, SAMs with surface energies of 49.4 mJ m(-2)and 23.5 mJ m(-2), respectively, improved the IGZO TFT PBS from 2.47 V to 0.32 V after the SAM treatment and the IGZO TFT clockwise hysteresis was also enhanced from 0.23 V to 0.11 V without any deterioration of TFT characteristics. Employing lower surface energy functional groups to the SAM, of the same head and body groups, passivates and protects the IGZO backchannel region from oxygen molecules in the atmosphere. Consequently, the enhanced electrical stability of IGZO TFTs can be achieved by the simple and economic SAM treatment.
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