期刊
NANO LETTERS
卷 20, 期 9, 页码 6791-6797出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c02757
关键词
2D materials; tungsten diselenide; local strain engineering; exciton funneling
类别
资金
- Army Research Office (ARO) Multidisciplinary University Research Initiative (MUM) program [W911NF-18-1-0431]
- National Science Foundation (NSF) Research Advanced by Interdisciplinary Science and Engineering (RAISE) [CHE-1839155]
- National Science Foundation EFRI 2-DARE [1542863]
- CREST, JST [JPMJCR15F3]
- Samsung Scholarship
- Elemental Strategy Initiative by MEXT, Japan
The ability to control excitons in semiconductors underlies numerous proposed applications, from excitonic circuits to energy transport. Two dimensional (2D) semiconductors are particularly promising for room-temperature applications due to their large exciton binding energy and enormous stretchability. Although the strain-induced static exciton flux has been observed in predetermined structures, dynamic control of exciton flux represents an outstanding challenge. Here, we introduce a method to tune the bandgap of suspended 2D semiconductors by applying a local strain gradient with a nanoscale tip. This strain allows us to locally and reversibly shift the exciton energy and to steer the exciton flux over micrometer-scale distances. We anticipate that our result not only marks an important experimental tool but will also open a broad range of new applications from information processing to energy conversion.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据