期刊
MICROELECTRONIC ENGINEERING
卷 232, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.mee.2020.111406
关键词
Ion beam etching; Lift-off; Electron beam lithography; SERS; Metallic nanostructures; 10 nm-scale
资金
- National key scientific instrument and equipment development key special project Micro-focus X-ray Fresnel lens batch preparation technology [2018YFF0109100]
- National Natural Science Foundation of China [51722503, 51805160]
- Science and Technology Bureau Foundation of Changsha City [kh1904005]
Reliable fabrication of metallic patterns at nanoscale is of great interest for various practical applications in nanodevices. Electron-beam-lithography based lift-off is the most often used method to define exquisite metal nanostructures at the 10-nm scale. In a common wet lift-off process, the metal material on top is lifted-off and washed away together with the sacrificial resist layer below. However, the wet lift-off process is sometimes ultrasonic agitation and/or heating-dependent and limited by the probable remained debris problem. In this work, we present an alternative lift-off process to obtain metallic patterns via removing the unwanted parts by using ion beam etching. We demonstrated that this ion-beam-etching based lift-off process is effective for isolated exposed negative-tone resist to fabricate nanoholes and nanoslits array and for dense networked exposed resist to fabricate high-density packed nanostructures. SERS measurements were conducted to demonstrate the molecular detection capability of the nanostructures with tiny gaps fabricated by this ion-beam-etching based lift-off process.
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