Characterization of the photothermal interaction of a semiconducting solid sphere due to the mechanical damage and rotation under Green-Naghdi theories

The present paper is dealing with a new mathematical model of a thermoelastic semiconducting solid sphere based on the Green-Naghdi theories to study the photothermal interaction. We applied two considerations: the mechanical damage variable, and rotation with constant speed. The bounding surface of the sphere has been thermally loaded by thermal shock. Laplace transform has been applied, and its inversions have been computed numerically. The numerical results of the temperature increment, carrier density increment, strain, displacement, stress, and stress-strain energy have been represented in figures. The damage and rotation have significant effects on all the studied functions.

Automated summary

This paper introduces a new mathematical model of a thermoelastic semiconducting solid sphere based on the Green-Naghdi theories to study photothermal interaction. Damage and rotation have significant effects on all studied functions, especially when the bounding surface of the sphere is thermally loaded.