Investigation of honey thin film as a resistive switching material for nonvolatile memories

In this paper, we report, for the first time, honey thin film as a resistive switching material and its memory behaviors. A dried honey film was sandwiched in between a CuxO bottom electrode and a Cu top electrode to form a metal-insulator-metal structure on a glass substrate. Current-voltage measurements showed that the device exhibited bipolar switching characteristics with Ohmic conduction behavior and a read memory window of 2.6 V. When biased at a read voltage of 0.2 V, the data retention time is over an interval of 10(4) s and ON/OFF ratio is in the order of 10(7). These properties prove the potential of honey based organic resistive switching devices for green electronics and nonvolatile memory applications. (C) 2020 Elsevier B.V. All rights reserved.