First-principle study on the quantum transport in an armchair silicene nanoribbon-based p-n diode

Using the first-principle calculations, we study the electronic band structure, density of state (DOS), effective mass, quantum capacitance, transmission spectrum, and current voltage characteristic of armchair silicene nanoribbons (ASiNRs) doped with aluminum (Al) and phosphorus (P) atoms. ASiNR is an intrinsic semiconductor, and depending on the type of impurity atoms applied, it becomes an n-type and p-type semiconductor. Our numerical results show several open energy windows and different peaks in the transmission spectra under various applied bias. These effects cause nonlinear behavior in the current voltage curves. Also, the value of current density for four samples is obtained as J(pure) > J(Al) > J(P) > J(Al&P) at a fixed voltage. The threshold voltage for these samples are given as Vth(pure) > V-Al(th) > V-P(th) > V-Al&P(th). The effective masses of carriers increase in the pure and doped ASiNR systems are calculated from the band structures spectra. Moreover, the quantum capacitance of the pure and doped ASiNR is investigated for direct and reverse biases. The results of this work may be useful in novel phenomena such as nanoelectronics applications and near-infrared photodetectors.

Automated summary

By studying the properties of silicon nanoribbons through calculations, it was found that different types of doping atoms can change its conductivity properties, leading to nonlinear behavior in current-voltage curves.