4.1 Article

Passively-Q-Switched 1.33 μm Nd:Luysgg Laser with the Bi2Se3Topological Insulator as a Saturable Absorber

期刊

JOURNAL OF RUSSIAN LASER RESEARCH
卷 41, 期 4, 页码 358-363

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SPRINGER
DOI: 10.1007/s10946-020-09886-6

关键词

topological insulator; Bi2Se3; Nd; LuYSGG crystal

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资金

  1. Doctoral Research Fund of Shandong Jianzhu University [XNBS1636]

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In this work, we demonstrate a passively-Q-switched 1.33 mu m Nd:Lu2YSc1.5Ga3.5O12(Nd:LuYSGG) laser based on the Bi(2)Se(3)topological insulator (TI) as a saturable absorber (SA). We obtain pulse widths as low as 146 ns at a pulse repetition rate of 349.5 kHz and a pulse energy of 1.03 mu J, which provides a peak power of 7.05 W. These results represent some of best yet published in terms of repetition rate, pulse width, and peak power for TI-basedQ-switched 1.3 mu m lasers, which indicates that TIs are suitable as SAs in the 1.3 mu m region.

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