期刊
JOURNAL OF MEDICAL AND BIOLOGICAL ENGINEERING
卷 40, 期 4, 页码 601-609出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s40846-020-00552-5
关键词
Silicon nanowire (SiNW); Field-effect transistor (FET); Vascular endothelial growth factor (VEGF); DNA aptamer
资金
- Ministry of Science and Technology in Taiwan [MOST 108-2221-E-035-032, MOST 107-2113-M-039-002-MY2, 106-2221-E-039-005-MY2, 109-2221-E-039-013-MY2]
Purpose Cancer detection is an important part of modern medical diagnosis and many strategies based on nanotechnology had been developed in recent years. Of which, silicon nanowire (SiNW) field-effect transistor (FET) biosensor via DNA aptamer capture is considered as an interesting and viable option. Hence, in this report, we had assembled a n-type triple SiNW FET biosensor for the detection of vascular endothelial growth factor (VEGF) via surface functionalized DNA aptamer for a proof-of-concept. Method The SiNW FET biosensor was fabricated via top-down approach and the physical nature of the nanowire assembly was examined via atomic force microscopy (AFM) as well as scanning electron microscopy (SEM). We had subsequently grafted VEGF specific DNA aptamer via conventional EDC/NHS chemistry and later measured the conductance of the nanowires in a four-point probe detector for VEGF detection. Result We had demonstrated that the detection of VEGF was possible even at a concentration of 2.59 nM which was highly comparable to the other common biosensors for detection of VEGF protein. Conclusion In addition to being scalable with complementary metal-oxide-semiconductor (CMOS) technology, the findings as demonstrated from our simple SiNW FET biosensor setup had helped to provide better insights towards optimizing the approach for the development of the next generation of miniature biosensors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据