期刊
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
卷 68, 期 -, 页码 216-226出版社
JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2020.06.047
关键词
Quantum dots; Broadband detection; Flexible photodetectors; Fast photoresponse speed; Heterostructures
资金
- Project of State Key Laboratory of Transducer Technology [SKT1404]
- Fundamental Research Funds for the Central Universities [2020CX02002, BITBLR2020013]
- Key R&D Projects of the Ministry of Science and Technology [SQ2019YFB220038]
Flexible and broadband optoelectronic devices based on CsPbBr3/PbSe quantum dot heterostructures have shown high responsivity and stability. These devices maintain high performance even after bending or exposure in ambient air, with significantly shortened response time compared to traditional PbSe QDs-based detectors.
Due to their promising applications in foldable displays, optical communication equipment and environmental monitoring systems, flexible and broadband optoelectronic devices have gained extensive attention in recent years. Here, a flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot (QD) heterostructures is firstly presented. The integrated QD heterostructures possess consecutive detection range from ultraviolet (UV) to long-wavelength infrared (LW-IR) regions with efficient light absorption and chemical stability, in comparison with the pristine PbSe QDs. Systematic material characterizations reveal the improved exciton dissociation, carrier transport and carrier lifetime of the QD heterostructures. Flexible photodetector Ag/CsPbBr3/PbSe/Ag demonstrate a high responsivity of 7.17 A/W with a specific detectivity of 8.97 x 10(12) Jones under 25 mu W/cm(2) 365 nm illumination at 5 V. Furthermore, it could maintain 91.2 % (or 94.9 %) of its initial performance even after bending for thousands of times (or exposing in ambient air for 4 weeks). More importantly, its response time is shortened more than three orders of magnitude as that of pristine PbSe QDs-based photodetectors. Therefore, it provides a feasible and promising method for the next-generation high-performance broadband photodetectors via constructing heterostructures of various QDs. (C) 2021 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
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