期刊
JOURNAL OF LUMINESCENCE
卷 222, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2020.117138
关键词
Si quantum dots; Electroluminescence; Silicon oxynitride
类别
资金
- National Nature Science Foundation of China [61274140]
- Science and Technology Planning Project of Guangdong Province [2017B090921002]
- Science and Technology Planning Project of Chaozhou, China [2018SS24]
Strong red light emission from silicon oxynitride-based (SiOxNy-based) light-emitting diodes (LEDs) was investigated. The introduction of dense Si quantum dots (Si QDs) into SiOxNy not only increases carrier injection efficiency but also results in a significant enhancement of more than 300% in the light emission efficiency compared with SiO(x)N(y )based LEDs without Si QDs. Moreover, the efficiency droop phenomenon is remarkably suppressed in the SiOxNy based LED containing dense Si QDs. Analysis of the dominant recombination process indicates that the improved performance of the SiO(x)N(y )based LEDs results from the increased bimolecular radiative recombination probability.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据