期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 849, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.156628
关键词
Heterojunction; UV photodiode; SnO2; Nanorods
Integrating nanorods (NRs) into the structure of p-n heterojunction-based devices proposes a promising approach to overcome limited light absorption and charge transfer in optoelectronic devices. Herein, a new design scheme is demonstrated to improve the UV photo response properties of the heterojunction photodiodes. This design contains a spin-coated SnO2 thin film underneath hydrothermally grown SnO2 NRs. The NRs play versatile roles in enhancing the light trapping and providing direct pathway for electron transport, while thin film provides vertically aligned NRs formation and high-quality junction creation. The resulting structure offers an improvement in light harvesting and photo response characteristics of the devices. A photoresponsivity of 110 mA/W and a photosensitivity of 5.3 are observed in SnO2-NRs/SnO2/p-Si heterostructure. This structure can be a promising candidate for UV sensing applications owing to its high responsivity, sensitivity and easy fabrication process. (C) 2020 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据