期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 833, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.155032
关键词
Pulsed laser deposition; BexCdyZn1-x-yO alloys; Bandgap engineering; UV photodetectors
资金
- National Key R&D Program of China [2019YFB1503500]
- National Natural Science Foundation of China [51572073,11574074,11774082, 11975093]
- Natural Science Foundation of Hubei Province [2019CFA006, 2018CFB700]
- Programfor Science and Technology Innovation Team in Colleges of Hubei Province [T201901]
- Wuhan Application Foundation Frontier Project [2018010401011287]
We report on the synthesis of Be and Cd co-substituted ZnO (BexCdyZn1-x-yO) quaternary alloy films on c-plane sapphire substrates by pulsed laser deposition. The results show that all deposited films exhibit single-phase wurtzite structure with a surface roughness less than 1.5 nm. By adjusting the O-2 pressure during growth, the optical bandgap of the film is tuned from similar to 3.3 to similar to 3.52 eV. At 5 V bias, the BexCdyZn1-x-yO-based photodetector exhibits a remarkable photoresponse in the ultraviolet region with low dark current (similar to 16.2 pA) and high detectivity (9.31 x 10(10) Jones). The rise and decay times of the photodetectors based on BexCdyZn1-x-yO (order of seconds) are clearly faster than those based on pure ZnO (order of minutes). Higher O-2 pressure results in better crystalline quality of BexCdyZn1-x-yO film and thus lower dark current and faster photoresponse in the device due to the decrease of oxygen vacancy-related defects under oxygen-rich growth conditions. These results indicate that oxygen pressure plays an important role in the growth of high-quality BexCdyZn1-x-yO alloy films, which have great potential in fabricating high-performance ultraviolet photodetectors. (c) 2020 Elsevier B.V. All rights reserved.
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