期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 59, 期 8, 页码 -出版社
IOP Publishing Ltd
DOI: 10.35848/1347-4065/aba5e1
关键词
memristor; perovskite; memtransistor; field-effect transistor; thin-film transistor; organic-inorganic hybrid
资金
- National Research Foundation of South Korea (NRF) through the Korean Government Ministry of Science, ICP and Future Planning (MSIP) [NRF-2019R1F1A1059601]
We exploit the problem of ion migration in the halide perovskite CH3NH3PbI3(MAPbI(3)) by developing a memtransistor (i.e. hybrid memristor and transistor) with the field-effect transistor geometry. Application of an electric field between the drain and the source results in resistive switching from a high resistance state (HRS) to a low resistance state (LRS) due to dynamic redistribution of ions in the MAPbI(3)layer. The gate enables continuous tuning of this LRS across several orders of magnitude. The LRS persists after removing the power supply and the memtransistor can be switched back to the HRS by reversing the bias polarity. Excellent state retention is demonstrated for 10(4) s and a switching ratio (HRS/LRS) of 10(2)is maintained for 1000 cycles, thus confirming good retention and cyclic endurance for the resistive switching behavior. Continuous tuning of the state conductance is essential for neuromorphic architectures and hard to achieve with two-terminal memristors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据