Switching losses prediction methods oriented to power MOSFETs - a review

The aim of this study is to review the state-of-the-art of recent prediction methods for power metal-oxide-semiconductor field-effect transistors (MOSFETs) switching losses using datasheet parameters. A detailed technical literature investigation is carried out to collect the latest research contributions on this subject, pointing out their main features and drawbacks. Then, a particular section is dedicated to compare three different selected methods oriented to Si-based and SiC-based MOS power transistors. This analysis is performed on several voltage and current level ratings using an experimental prototype of a double pulse circuit. According to the experimental-supported study included here, at a particular volt-ampere condition, the Ahmed method provided the lowest theoretical error of 2.38%, while the Guo method attained 41.2% and Brown method presented 28.5%. In addition, according to the experimental results it can be concluded that it is very difficult to obtain a high level of accuracy concerning MOSFET switching losses, mainly due to the uncertainty when selecting datasheet information. Among the parameters that most influence the measurements, one could list the MOSFET transconductance, the channel threshold voltage and the parasitic inductances.