期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 67, 期 7, 页码 1381-1389出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2020.3002729
关键词
Leakage currents; Ions; Silicon carbide; Logic gates; Radiation effects; Degradation; MOSFET; Heavy ion; leakage current degradation; microbeam; silicon carbide (SiC) vertical double-diffused power (VD)-MOSFET; single-event effect (SEE); single-event leakage current (SELC)
资金
- European Union [730871]
- ETH Zurich Foundation
- European Space Agency [4000124504/18/NL/KML/zk]
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain-source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in the p-n junction region. This provides useful insights into the understanding of basic phenomena of single-event effects in SiC power devices.
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