4.8 Article

InGaN RGB Light-Emitting Diodes With Monolithically Integrated Photodetectors for Stabilizing Color Chromaticity

期刊

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
卷 67, 期 6, 页码 5154-5160

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIE.2019.2926038

关键词

Color; Light emitting diodes; System-on-chip; Lighting; Photoconductivity; Temperature measurement; Quantum well devices; Color chromaticity; gallium nitride (GaN); light-emitting diode; monolithic integration; photodetector

资金

  1. NFSC/RGC Joint Research Scheme - Research Grants Council of Hong Kong
  2. National Natural Science Foundation of China [N_HKU710/15]

向作者/读者索取更多资源

In this paper, a solution toward realizing color chromaticity stabilized InGaN red, green, and blue (RGB) light-emitting diode (LED) is proposed and demonstrated. The InGaN/GaN multiple quantum wells (play a key role in light emission from the LEDs and photodetection from the photodetectors (PDs). The spectral overlaps between the emission and absorption spectra are measured and the photocurrents of the PDs exhibit linear behavior with increasing LED driving currents. The solution involves the use of RGB chips with monolithically integrated PDs that detect the levels of light output from an individual chip in real time, whose photocurrent signals are fed to LED driver circuits that make use of the signal to provide a driving current that stabilizes the light output. Adoption of this feedback strategy results in CIE coordinates drifts of Delta(0.003, 0.005) over the 400 h duration of testing, proving to be an effective way of stabilizing color chromaticity from RGB LEDs.

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