期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 6, 页码 2489-2494出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2985635
关键词
Equivalent oxide thickness (EOT); hafnium zirconium oxide (HZO); high pressure post metallization annealing (HPPMA); multiphase; rapid thermal annealing (RTA)
资金
- Samsung Research Funding Center of Samsung Electronics [SRFCTA1703-01]
In this article, we report the fabrication of Zr-rich high-k ferroelectric hafnium zirconium oxide (HZO) capacitor with TiN as the top and bottom electrodes demonstrating an equivalent oxide thickness (EOT) of 5.7 angstrom and remanent polarization (P-r) of similar to 16 mu C/cm(2). High-k value and low EOT was achieved by utilizing multiphase region of HZO as well as high pressure post metallization annealing (HPPMA). Despite the high-k value of Zr-rich HZO films, the emergence of multiphase region at higher physical thickness when annealed using rapid thermal annealing (RTA) limits its EOT value. On the contrary, multiphase emerges at a smaller physical thickness in HPPMA due to the formation of more o-phase as revealed by grazing incidence X-ray diffractometer (GIXRD). The smaller physical thickness of HPPMA together with the demonstration of significantly higher dielectric constant (>50) by HZO in the vicinity of multiphase, was therefore, found to be very effective in reducing the EOT.
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