期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 8, 页码 3123-3128出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2998101
关键词
Hydrogen; Logic gates; Thin film transistors; Threshold voltage; Dielectrics; Electrodes; Amorphous indium gallium zinc oxide (a-InGaZnO); hydrogen diffusion; thin-film transistors (TFT); top-gate
资金
- Ministry of Science and Technology (MOST) [108-2823-8-110-001]
The quality and stability of thin-film transistors (TFTs) applied to large-scale displays are crucial to their successful manufacture and commercial applicability. This article introduces a TFT manufacturing process in which the source/drain system is defined by hydrogen doping in the dielectric layer of the top-gate amorphous indium gallium zinc oxide (a-IGZO). A size effect related to this system exists where longer channels allow a greater amount of hydrogen to diffuse into the center of the channel. For shorter channels, this results in a lower energy barrier and a shift in the threshold voltage. A physical mechanism model is proposed to verify the abnormal electrical characteristics caused by hydrogen diffusion into the top-gate a-IGZO. The insights provided by these results can be used to further develop TFTs for use in large-scale display applications.
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