4.6 Article

Dependence of the Modulation Transfer Function on the Material and Design Parameters of HgCdTe IR FPAs

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 8, 页码 3175-3179

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2996176

关键词

Lighting; Optimized production technology; Absorption; Mathematical model; Charge carriers; Optical imaging; Numerical models; Cadmium-mercury-tellurium (HgCdTe); infrared (IR) focal plane array (FPA); modulation transfer function (MTF); photodiode; photosensitive pixel (PP); threshold sensitivity

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The calculation methods of the modulation transfer function (MTF) infrared (IR) focal plane arrays (FPAs) on the base of photodiodes are presented. The obtained results are based on the preliminary calculations of the areal distribution of quantum efficiency by modeling the 3-D diffusion process of photogenerated charge carriers in the photosensitive layer of IR FPA by the Monte Carlo method. The analysis of MTF is carried out for 1-D test patterns and 2-D chess-type test patterns, taking into account the basic photoelectric and design parameters of photosensitive elements.

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