期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 8, 页码 3431-3434出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2998444
关键词
Capping layer; ferroelectric; hafnia thin film; interfacial dead layer; oxygen vacancy; RuO2 oxide metal
资金
- Samsung Research Funding Center of Samsung Electronics [SRFCTA1703-01]
Electrical and reliability characteristics of hafnia ferroelectric capacitor are influenced by a capping electrode layer which controls the type of stress and the amount of oxygen vacancy inside hafnia. Here, we present the impact of metal nitride and metal oxide electrode on the ferroelectricity of a Hf0.5Zr0.5O2 (HZO) capacitor. For comparison, we employed two different top electrodes (RuO2 and TiN) with hafnia ferroelectric layer, forming RuO2/HZO/TiN and TiN/HZO/TiN capacitors. The RuO2 top electrode provides additional oxygen to the HZO film, lowering the amount of oxygen vacancies in the film. From material analysis, we found that the top RuO2/HZO interface exhibits less oxygen vacancy in comparison to the top TiN/HZO interface. In addition, for RuO2/HZO/TiN, due to different thermal expansion coefficient between top and bottom electrodes, the HZO film experiences significant tensile stress, resulting in the high o-phase formation and remnant polarization (similar to 20 mu C/cm(2)) as compared with that of TiN/HZO/TiN capacitor (similar to 13 mu C/cm(2)). This article suggests an efficient solution to reduce the interfacial defects and oxygen vacancies as well as to enhance o-phase formation and ferroelectricity.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据