期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 8, 页码 3478-3485出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3002220
关键词
Atomistic mode-space (MS) quantum transport; body thickness; scattering; triple heterojunction tunnel field-effect transistors (TFETs); TFET
资金
- National Science Foundation E2CDA Type I Collaborative Research on A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing [1639958]
- Semiconductor Research Corporation [2694.003]
- U.S. National Science Foundation [EEC-1227110, EEC-0228390, EEC-0634750, OCI-0438246, OCI-0721680]
- NSF Peta-Apps [OCI-0749140]
- Intel Corporation
- Extreme Science and Engineering Discovery Environment (XSEDE), San Diego Supercomputer Center (SDSC) Dell Cluster with Intel Haswell Processors (Comet) [TG-ECS190009]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1639958] Funding Source: National Science Foundation
The triple heterojunction tunnel field-effect transistor (TFET) has been originally proposed to resolve the TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full-band atomistic nonequilibrium Green's function (NEGF) approach, including scattering, is required to model the carrier transport accurately. However, such simulations for devices with realistic dimensions are computationally unfeasible. To mitigate this issue, we have employed the empirical tight-binding mode-space approximation to simulate the triple heterojunction TFETs with the body thickness up to 12 nm. The triple heterojunction TFET design is optimized using the model to achieve a sub-60-mV/decade transfer characteristic under realistic scattering conditions.
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