期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 67, 期 8, 页码 3129-3134出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3000197
关键词
Atomic layer deposition (ALD); bias stress stability; thin-film transistors (TFTs); ZnO (ZO); ZO doped by Ga
资金
- National Key Research and Development Plan (MOST) [2017YFA0205802]
- National Natural Science Foundation of China (NSFC) [11875212, 11574235]
Ga-doped ZnO (GZO) thin-film transistors (TFTs) with different doping concentrations (n(Ga): n(Zn) = 0, 1:150, 1:75, 1:50) were successfully fabricated by atomic layer deposition. Among them, GZO TFTs with the doping concentration of 1:75 exhibited a high field-effect mobility of 16.2 cm(2) V-1 s(-1), a small subthreshold swing of 0.22 V dec(-1), a high ON-/OFF-current ratio of 107, and a proper threshold voltage of 6.0 V as well as a small threshold voltage shift of 0.14 V under positive bias stress. Compared to ZnO (ZO) TFTs, GZO TFTs exhibit excellent bias stability and electrical properties, which can be attributed to appropriate Ga doping concentration suppressing the oxygen vacancy defects, decreasing the trap density at the Al2O3/ZO interfaces, and broadening energy band of the ZO thin films.
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