期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 55, 期 7, 页码 1842-1853出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2020.2987702
关键词
1/f noise; phase noise; voltage-controlled oscillators (VCOs)
Class-C operation is leveraged to implement a K-band CMOS voltage-controlled oscillator (VCO) where the upconversion of 1/f current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as -112 dBc/Hz at 1-MHz offset (-86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of -185 dBc/Hz. The design is complemented by a theoretical investigation of 1/f noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the 1/f(3) region.
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