期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 7, 页码 1005-1008出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3000071
关键词
Cryogenic; C-band; InP high-electron-mobility transistor (InP HEMT); low-noise amplifier (LNA); noise; power dissipation
资金
- GigaHertz Centre by Swedish Governmental Agency of Innovation System (Vinnova)
- RISE Research Institutes of Sweden
- Chalmers University of Technology
- Low Noise Factory AB
- Omnisys Instruments
- Wasa Millimeter Wave
This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of 112 mu W. This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current with the use of an InP etch stop layer and Pt gate metal. The noise performance of InP HEMTs was demonstrated in a 4-8 GHz (C-band) three-stage hybrid LNA at the ambient temperature of 5 K. At a dc power dissipation of 300 mu W, the average noise temperature was 2.8 K with 27 dB gain. At a dc power dissipation of 112 mu W, the LNA exhibited an average noise temperature of 4.1 K with a gain of 20 dB. The presented results demonstrate the large potential of InP HEMT technology for sub-mW cryogenic LNA design.
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