期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 7, 页码 1029-1032出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3000052
关键词
2D materials; MOSFETs; electronic properties; transport properties; first principles calculation
资金
- Training Program of the Major Research Plan of the National Natural Science Foundation of China [91964103]
- Natural Science Foundation of Jiangsu Province [BK20180071]
- Fundamental Research Funds for the Central Universities [30919011109]
Here, the electronic properties and ballistic transport properties of two-dimensional (2D) ZrNBr are comprehensively investigated by the nonequilibrium Green's function coupled with density functional theory. 2D ZrNBr has a wide direct band gap of 1.82 eV with the highest mobility of 8700 cm(2) V-1 s(-1). Both the n- and p-type 2D ZrNBr MOSFETs with 5-nm channel length hold the on-currents above 2300 mu A/mu m for high-performance devices and an on/off ratio exceeding 10(6) for low-power applications, which is of great value for the design of complementary circuits in 2D electronics. In addition, the energy-delay products of the single 2D ZrNBr MOSFETs and the 32-bit Arithmetic Logic Unit show more potential compared to other 2D materials and CMOS proposals. Thus, this work broadens a promising path towards beyond-silicon electronic systems.
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