期刊
IEEE ELECTRON DEVICE LETTERS
卷 41, 期 7, 页码 1110-1113出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2997319
关键词
Logic gates; Junctions; Silicon; Field effect transistors; Tin; Current density; Nanowires; reconfigurable field effect transistors; polarity control; electrostatic doping; silicon on insulator technology; omega-gates; multiple-gate devices
资金
- German Research Foundation (DFG) through the frameworks ReproNano [WE 4853/1-3]
- cluster of excellence Center for Advancing Electronics Dresden (CfAED) [EXC 1056]
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high ON/OFF current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.
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