Low Subthreshold Swing and High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

We report high performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing (SS) of 70.2 mV/decade, high effective mobility (mu(eff)) of 55.3cm(2)/V center dot s at an inversion carrier density (N-inv) of 5 x 10(12) cm(-2), and large I-ON/I-OFF of >10(9). Furthermore, very good device-to-device uniformity has been confirmed by the statistical distribution of SS and maximum transconductance (G(m,max)) measured from 20 pristine TFT devices. This a-IGZO TFT has immense potential for the ultrafast and low power electronic devices for next-generation cost-effective emissive display, image sensing, and hardware for artificial intelligence (AI).