期刊
CRYSTAL RESEARCH AND TECHNOLOGY
卷 55, 期 8, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/crat.202000044
关键词
control engineering; lumped parameter model; mathematical modeling; parameter estimation; silicon crystal growth
资金
- Leibniz Association
In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model-based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached.
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