4.8 Article

Optoelectronic and Energy Level Exploration of Bismuth and Antimony-Based Materials for Lead-Free Solar Cells

期刊

CHEMISTRY OF MATERIALS
卷 32, 期 15, 页码 6416-6424

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.0c01503

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资金

  1. PRESTO program from the Japan Science and Technology Agency (JST) of Japan [JPMJPR15N6]
  2. Japan Society for the Promotion of Science (JSPS)
  3. KAKENHI [JP16H02285]
  4. JSPS [201820108]
  5. JSPS Overseas Challenge Program for Young Researchers
  6. SNSF [200020L_1729/1]

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Bismuth- and antimony-based materials, such as A(3)M(2)X(9) and AMSX(2) (A = cation, M = Bi, Sb, S = sulfur, X = halogen), are promising candidates as the counterpart to lead halide perovskite. However, the large number of different compositions and crystal structures (dimer, perovskite, etc.) has made these materials largely overlooked; thus, an intuitive evaluation strategy is required. Here, we present a comprehensive study of the energy levels (bandgap, valence band maximum, etc.) and optoelectronics (photoconductivity and charge transfer to charge transport material) of the Bi - and Sb-based materials, which include 6 crystal categories with 44 compositions, by using time-resolved microwave conductivity (TRMC). Importantly, we found an efficient hole transfer from the Sb-based materials to the hole transport materials with the inclusion of the thiophene component, leading to an improved power conversion efficiency of 2.91% for Sb2S3-containing SbSI, prepared by a novel one-step method. Our study establishes a key rule for exploring active layer compositions and designing device structures, which would accelerate the evolution of Bi- and Sb-based lead-free solar cells.

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