4.7 Article

Sandwich-structured polymers with electrospun boron nitrides layers as high-temperature energy storage dielectrics

期刊

CHEMICAL ENGINEERING JOURNAL
卷 389, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2020.124443

关键词

Polycarbonate films; h-BN; Thermal conductivity; High-temperature; Energy storage characteristics

资金

  1. National Natural Science Foundation of China [51977050, 51807041, 51807042]
  2. Natural Science Foundation of Heilongjiang Province of China [QC2018067, TD2019E002]
  3. China Postdoctoral Science Foundation [2018M640302]
  4. Heilongjiang Postdoctoral Financial Assistance [LBH-Z18098]
  5. Fundamental Research Foundation for Universities of Heilongjiang Province [LGYC2018TD001, LGYC2018JC019]

向作者/读者索取更多资源

Most dielectric polymers have unsatisfactory energy storage characteristics at high temperature. In this work, hexagonal boron nitride (h-BN) layers with different thickness playing roles in thermal conduction and carrier blocking are designed and transferred on both sides of polycarbonate (PC) films. They existing in the aggregation status of h-BN plates are fabricated via electrospinning technology. It is found that the thermal conductivity of the composite films is improved due to the existence of h-BN layers. The composite film with layer thickness of 1 mu m (BN-1) has low leakage current density, high breakdown strength and excellent high-temperature energy storage characteristics. The energy storage density of BN-1 is 5.52 J/cm(3) under 500 MV/m electric field at 100 degrees C, which is 15.10% higher than that of pure PC. At the same time, the density and efficiency stability of BN-1 are superior to pure PC in the temperature range of RT-100 degrees C. Finally, the operation status of composite capacitor in practical applications is simulated by using the dynamic data concerning thermal conductivity and leakage current of composite films at different temperatures. The outstanding operation status in composite capacitor indicates that a promising, scalable and affordable route to high-temperature dielectric is provided.

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