期刊
CERAMICS INTERNATIONAL
卷 46, 期 10, 页码 16518-16523出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2020.03.217
关键词
Porous 3C-SiC film; Laser chemical vapor deposition (LCVD); Microstructure; Growth mechanism
资金
- Ministry of Education for Pre-research of Equipment [6141A02022257]
- Science Challenge Project [TZ2016001]
- National Natural Science Foundation of China [51861145306, 51872212, 51972244]
- 111 Project [B13035]
- International Science & Technology Cooperation Program of China [2018YFE0103600, 2014DFA53090]
- Technological Innovation of Hubei Province, China [2019AAA030]
Porous SiC film is an excellent electrode material for robust micro-supercapacitors used in extremely harsh environments. In one of our previous studies, porous 3C-SiC film with high areal capacitance and high deposition rate was prepared via laser chemical vapor deposition (LCVD). However, it is still urgent to explore the formation mechanism of porous structures using LCVD. In this study, the microstructure of the porous cubic SiC film prepared via LCVD was analyzed in detail using scanning and transmission electron microscopy techniques. The growth mechanism of the deposits has been proposed according to the growth competing theory and shadow effect theory.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据