期刊
CHINESE PHYSICS B
卷 25, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/25/2/027703
关键词
fundamental circuit element; magnetoelectric effect; multiferroic; memtranstor; memristor
资金
- National Natural Science Foundation of China [11227405, 11534015, 11274363, 11374347]
- Natural Science Foundation from the Chinese Academy of Sciences [XDB07030200]
The memtranstor has been proposed to be the fourth fundamental circuit memelement in addition to the memristor, memcapacitor, and meminductor. Here, we demonstrate the memtranstor behavior at room temperature in a device made of the magnetoelectric hexaferrite (Ba0.5Sr1.5Co2Fe11AlO22) where the electric polarization is tunable by external magnetic field. This device shows a nonlinear q-phi relationship with a butterfly-shaped hysteresis loop, in agreement with the anticipated memtranstor behavior. The memtranstor, like other memelements, has a great potential in developing more advanced circuit functionalities.
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