期刊
CHINESE PHYSICS B
卷 25, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/25/2/027102
关键词
nitride materials; p-type GaN; resistivity; carbon concentration
资金
- National Natural Science Foundation of China [61474110, 61377020, 61376089, 61223005, 61176126]
- National Natural Science Fund for Distinguished Young Scholars, China [60925017]
- One Hundred Person Project of the Chinese Academy of Sciences
- Basic Research Project of Jiangsu Province, China [BK20130362]
Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition (MOCVD). And the different variation behaviors of resistivity with growth condition for high-temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film. These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately, leading to the different variation behaviors of resistivity for HT-and LT-grown ones.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据