期刊
APPLIED PHYSICS LETTERS
卷 117, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0012087
关键词
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资金
- PRESTO from the JST in Japan [JPMJPR15R2]
- CREST from the JST in Japan [JPMJCR19Q5]
- research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan
- National Natural Science Foundation of China [51772056, 51961011, 51801040]
- Guangxi Natural Science Foundation of China [2019GXNSFAA245039]
- Open Foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University [2020GXYSOF11]
In this study, we report a power factor (PF) value as high as 1950 mu Wm(-1) K-2 for B-ion implanted thermoelectric Si1-x-yGexSny ternary alloy films at ambient temperature by radio frequency sputtering followed by a short-term rapid thermal annealing heat treatment. The record high PF value was realized by modulation doping of Sn in the Si1-x-yGexSny film. It was found that using metallic Sn as nanoparticles and Si1-x-yGexSny as the matrix leads to a large enhancement of the carrier concentration and a very small decrease in carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped Si1-x-yGexSny alloy were greatly improved. The findings of this study present emerging opportunities for the modulation of Si integration thermoelectrics as wearable devices charged by body temperature.
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