Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

We present a hard and soft x-ray photoelectron spectroscopy study of the interface chemistry in pristine TiN/La-doped Hf 0.5 Zr 0.5 O 2/TiN capacitors. An oxynitride phase (similar to 1.3nm) is formed at the top interface, while a TiO 2 - delta phase was detected near the bottom interface. The oxygen vacancy ( V O) concentration is higher at the top interface than in the film due to oxygen scavenging by the top electrode. The V O concentration was also found to increase from similar to 1.5 to 1.9 x 10 20 cm - 3 when increasing La doping from 1.7 to 2.7mol. %. Two La dopants are compensated by the formation of one positively charged V O.