期刊
APPLIED PHYSICS LETTERS
卷 116, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0012595
关键词
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资金
- European Union's Horizon 2020 research and innovation programme [780302 3epsilonFERRO]
- NIMS microstructural characterization platform as a program of the Nanotechnology Platform of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan [12024046]
We present a hard and soft x-ray photoelectron spectroscopy study of the interface chemistry in pristine TiN/La-doped Hf 0.5 Zr 0.5 O 2/TiN capacitors. An oxynitride phase (similar to 1.3nm) is formed at the top interface, while a TiO 2 - delta phase was detected near the bottom interface. The oxygen vacancy ( V O) concentration is higher at the top interface than in the film due to oxygen scavenging by the top electrode. The V O concentration was also found to increase from similar to 1.5 to 1.9 x 10 20 cm - 3 when increasing La doping from 1.7 to 2.7mol. %. Two La dopants are compensated by the formation of one positively charged V O.
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