Impact of hydrochloric acid on the epitaxial growth of In2O3films on (0001)α-Al2O3substrates by mist CVD

In(2)O(3)films were epitaxially grown on (0001)alpha-Al(2)O(3)substrates by mist CVD, and the impact of hydrochloric acid (HCl) was investigated by varying the HCl concentration in the source solution. Single-phase rhombohedral corundum-type In(2)O(3)films, without the incorporation of body-centered cubic bixbite-type In(2)O(3)phases, could be successfully grown directly on alpha-Al(2)O(3)substrates by controlling only the HCl concentration. In growth by mist CVD, adding HCl to the source solution was found to affect not only the dissolution of the source precursor but also the growth kinetics of phase control, surface migration and impurity incorporation.